1 wireless bipolar power transistor 40w, 850-1450mhz, 28v m/a-com products released - rev. 02.11 ph0814-40 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ?? npn silicon microwave power transistor ?? common emitter configuration ?? broadband class ab operation ?? interdigitated geometry ?? diffused emitter ballasting resistors ?? gold metalization system ?? internal input and output impedance matching ?? hermetic metal / ceramic package outline drawing 1 notes: (unless otherwise specified) 1. tolerances are: inches .005? (millimeters 0.13mm) absolute maximum rating at 25c electrical specifications at 25c parameter symbol rating units collector-base voltage v cbo 56 v collector-emitter voltage v ces 56 v emitter-base voltage v ebo 3.0 v collector current i c 5.6 a total power dissipation p tot 175 w junction temperature t j 200 c storage temperature t stg -55 to + 200 c thermal resistance jc 1.0 c/w parameter symbol min max units test conditions collector-emitter breakdown voltage bv ces 56 - v i c = 50ma collector-emitter leakage current i ces - 5.0 ma v ce = 28v collector-base breakdown voltage bv cbo 56 - v i c = 50ma emitter-base breakdown voltage bv ebo 3.0 - v i b = 10ma dc forward current gain h fe 15 100 - v ce = 5.0v, i c = 0.5 a input power p in 5.5 8.8 w v cc = 28v, ic q = 12 ma, p out = 42 w, f =1450mhz collector current i c ? - 3.75 a v cc = 28v, ic q = 12 ma, p out = 42 w, f =1450mhz input return loss rl 10 - db v cc = 28v, ic q = 12 ma, p out = 42 w, f =1450mhz load mismatch tolerance vswr-t - 3.1 - v cc = 28v, ic q = 12 ma, p out = 42 w, f =1450mhz load mismatch tolerance imd 3 - 1.5:1 - v cc = 28v, ic q = 12 ma, p out = 42 w, f =850mhz saturated output power p sat 50 - w v cc = 28v, ic q = 12 ma, f =1450mhz f (mhz) z in ( ? ) z of ( ? ) 850 2.0 - j3.6 3.0 - j4.9 950 2.4 - j2.5 2.3 - j3.1 1050 3.1 - j1.8 2.0 - j2.0 1150 3.5 - j1.9 1.8 - j1.4 1250 3.3 - j2.4 1.7 - j0.9 1350 2.5 - j2.4 1.4 - j0.5 1450 1.7 - j1.8 1.2 - j0.1 typical optimum device impedances
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